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| 2SK3125 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3125 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm * * * * Low drain-source ON resistance: RDS (ON) = 5.3 m (typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 30 V) Enhancement-model: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 20 70 210 150 955 70 15 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-16H1A Weight: 3.65 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 0.833 Unit C/W Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 25 V, Tch = 25C, L = 140 mH, RG = 25 W, IAR = 70 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-08-23 2SK3125 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr ID = 30 A VOUT RL = 0.5 W VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 30 A VDS = 10 V, ID = 30 A Min 3/4 3/4 30 1.5 3/4 30 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 5.3 60 4600 1400 2300 25 Max 10 100 3/4 3.0 7.0 3/4 3/4 3/4 pF Unit mA mA V V mW S 3/4 10 V VGS 0V 4.7 9 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 Turn-ON time Switching time Fall time ton 40 tf VDD ~ 15 V Duty < 1%, tw = 10 ms = 150 3/4 3/4 3/4 3/4 3/4 nC Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd 425 130 90 40 VDD ~ 24 V, VGS = 10 V, ID = 70 A - 3/4 3/4 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 70 A, VGS = 0 V IDR = 70 A, VGS = 0 V, dIDR/dt = 50 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 150 225 Max 70 210 -1.7 3/4 3/4 Unit A A V ns nC Marking TOSHIBA K3125 Type Lot Number Month (starting from alphabet A) Year (last number of the christian era) 2 2002-08-23 2SK3125 ID - VDS 100 Common source Tc = 25C Pulse test 8 60 4 6 10 100 5 4.5 10 8 80 6 5 4.5 ID - VDS Common source Tc = 25C Pulse test 80 4.25 (A) (A) ID ID 60 4 Drain current 40 3.75 3.5 Drain current 40 VOU 3.5 20 VGS = 3.25 V 0 0 20 VGS = 3.25 V 0 0 0.2 0.4 0.6 0.8 1 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 1.2 VDS - VGS Common source Tc = 25C Pulse test (A) 80 VDS Drain-source voltage (V) 100 1.0 0.8 Drain current ID 60 0.6 ID = 70 A 40 25 Tc = -55C Common source VDS = 10 V Pulse test 3 4 5 6 0.4 20 100 0.2 30 15 2 4 6 8 10 12 0 0 1 2 0 0 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 1000 100 RDS (ON) - ID iYfsi (S) Forward transfer admittance 100 Tc = -55C 100 25 Drain-source ON resistance RDS (ON) (mW) 10 VGS = 10, 15 V 10 Common source VDS = 10 V Pulse test 10 100 1000 1 1 1 1 Common source Tc = 25C Pulse test 10 100 Drain current ID (A) Drain current ID (A) 3 2002-08-23 2SK3125 RDS (ON) - Tc 20 Common source VGS = 10 V Pulse test 1000 IDR - VDS Drain-source ON resistance RDS (ON) (W) 16 IDR (A) 100 10 5 3 VGS = 0 V, -1 V 8 ID = 15, 30 A 70 Drain reverse current 12 10 1 Common source Tc = 25C Pulse test 1 0 0.4 0.8 1.2 1.6 2.0 4 0 -80 -40 0 40 80 120 160 Case temperature Tc (C) Drain-source voltage VDS (V) Vth - Tc 5 50 Dynamic input/output characteristics Common source ID = 70 A Tc = 25C Pulse test 25 4 40 20 Drain-source voltage 3 30 VDS 20 VDD = 24 V 10 VGS 0 0 6 12 15 2 10 1 Common source VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160 5 0 -80 40 80 120 160 0 200 Case temperature Tc (C) Total gate charge Qg (nC) PD - Tc 200 (W) Drain power dissipation PD 150 100 50 0 0 40 80 120 160 200 Case temperature Tc (C) 4 2002-08-23 Gate threshold voltage VGS (V) Gate threshold voltage Vth (V) VDS (V) 2SK3125 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.2 0.1 PDM t T Single pulse 0.01 Duty = t/T Rth (ch-c) = 0.833C/W 1m 10 m 100 m 1 10 0.1 0.05 0.02 0.01 10 m 100 m Pulse width tw (S) 1000 Safe operating area 1000 EAS - Tch ID max (pulse) * 100 ms * 100 ID max (continuous) (mJ) Avalanche energy EAS 800 (A) 1 ms * 600 Drain current ID DC operation Tc = 25C 10 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 1 VDSS max 10 100 400 200 0 25 50 75 100 125 150 1 0.1 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Test circuit RG = 25 W VDD = 25 VL = 140 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e 5 2002-08-23 2SK3125 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-08-23 |
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